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 TDA9511
DC COUPLING HIGH VOLTAGE VIDEO AMPLIFIER
. . . . .
BANDWIDTH : 40MHz TYPICAL RISE AND FALL TIME : 9ns TYPICAL SUPPLY VOLTAGE : 110V POWER DISSIPATION : 3.0W ESD PROTECTED
HEPTAWATT (Plastic Package)
DESCRIPTION The TDA9511 is a video amplifier designed with a high voltage Bipolar/CMOS/DMOS technology (BCD). It drives in DC coupling mode one cathode of a monitor and is protected against flashovers. It is available in Heptawatt package. PIN CONNECTIONS
7 6 5 4 3 2 1 VDD OUT GNDP GNDA VRE F VCC IN9511-01.EPS
ORDER CODE : TDA9511
Tab co nnecte d to Pin 4
PIN CONFIGURATION
Pin N 1 2 3 4 5 6 7 Symbol INVCC VREF GNDA GNDP OUT VDD Input of the amplifier Low Voltage Power Supply (12V Typ.) Internal Voltage Reference (3.3V) Analog Ground Power Ground Output driving the cathode High Voltage Power Supply (110V Max.)
9511-01.TBL
Function
April 1998
1/5
TDA9511
BLOCK DIAGRAM
TDA9511
7 VDD
6
OUT
VCC
2
IN- 1
VREF
AGND 4 3 VREF
5
PGND
9511-02.EPS
ABSOLUTE MAXIMUM RATINGS
Symbol V DD V CC VESD Supply High Voltage (Pin 7) Supply Low Voltage (Pin 2) ESD Susceptibility Human Body Model, 100pF Discharge through 1.5k EIAJ Norm, 200pF Discharge through 0 Output Current to VDD (Pin 6) Output Current to Ground (Pin 6) (see Note 1) Input Current (Pin 1) Junction Temperature Operating Ambient Temperature Storage Temperature Parameter Value 120 20 2 300 protected 80 50 150 0, +70 -20, +150 Unit V V kV V mA mA
o o o
IOD IOG Ij Tj Toper Tstg
C C C
9511-02.TBL 9511-03.TBL
Note 1 : Pulsed current t 50s
THERMAL DATA
Symbol R th (j-c) Rth (j-a) Parameter Junction-Case Thermal Resistance Junction-Ambient Thermal Resistance Max. Typ. Value 3 70 Unit
o o
C/W C/W
2/5
TDA9511
ELECTRICAL CHARACTERISTICS (VCC = 12V, VDD = 110V, Tamb = 25oC, unless otherwise specified)
Symbol VDD VCC IDD ICC VREF VIN dV IN/dT VSATH VSATL ELin OS BW Parameter High Supply Voltage (Pin 7) Low Supply Voltage (Pin 2) DC Current of High Voltage Supply (without feedback current) Low Voltage Supply Internal DC Current Internal Reference (Pin 3) Input Voltage Drift of Input Voltage versus Temperature High Output Saturation Voltage (Pin 6) Low Output Saturation Voltage (Pin 6) Linearity Error Overshoot Bandwidth at -3dB Measured on CRT cathodes. CLOAD = 10pF, Rprotect = 220, VOUT= 60V, VOUT = 20VPP, Feedback gain = 20 Measured between 10% & 90% of output pulse, CLOAD = 10pF, Rprotect = 220, VOUT = 60V, VOUT = 40VPP VOUT = 60V IO = -60mA IO = 60mA 17V < VOUT < VDD - 15V 5 40 VOUT = 60V Measured on Pin 1 VOUT = 60V Test Conditions Min. 20 10 12 9 15 3.2 3.25 0.12 0.5 VDD - 8.5 12 5 Typ. Max. 110 15 Unit V V mA mA V V % mV/oC V V % % MHz
dVIN /dVCC Drift of Input Voltage versus VCC
tR, tF
Rise and Fall Time
9
ns
GO
Open Loop Gain Open Loop Gain Temperature Coefficient
60 0.03
dB dB/oC 30 A nA/oC k
Input Bias Temperature Coefficient RIN Input Resistance See Note 2
Note 2 : Characterized and not tested.
90 200
Figure 1 : Measurement of Input Voltage
VIN = VOUT (1 + R2/R1) R1 VIN VOUT
9511-03.EPS
R2
3/5
9511-04.TBL
IIB
Input Bias Current (Pin 1)
VOUT = 60V
20
TDA9511
TYPICAL APPLICATION The TDA9511 consists of : - A differential amplifier with active load, - A DMOS output buffer, - Abandgapvoltage reference(Pin 3 forfiltering only). PC board lay-out The best performances are obtained with a carefully designed HF PC-Board, especially for the output and input capacitors. The feedback resistor RF must have a low parasitic capacitor (CF < 0.3pF). This parasitic capacitor CF must be compensated by a capacitor R3 (roughly 20 CF) connected in parallel with the input resistor R1. The full bandwidth of the device is only obtained with well matched compensation otherwise the application will have either an integrator response with a low bandwidth or a differentiator response with too much ringing. A diode DP (see Figure 2) has to be connected for flashover protection. Figure 2 : Typical Evaluation Schematic
CF RF VCC R1 2 1 3 R2 C4 4 VOUT 7 6 5 VOUT t VIN CLOAD
9511-04.EPS
Power dissipation The power dissipation consists of a static part and a dynamic part. The static dissipation varies with the output voltage and the feedback resistor. The dynamic power dissipation increases with the pixel frequency. For a signal frequency of 40MHz and 40VPP output signal, the typical power dissipation is about 3.0W, for VDD = 110V. In first approximation, the dynamic dissipation is : PD = VDD * CLOAD * VOUT * f and the total dissipation is : P = VDD * CLOAD * VOUT * f + VDD * IDD ____ _ ____ _ VOUT + VCC * ICC - (VDD - VOUT) RFEEDBACK with f = pixel frequency P = 110V x 10pF x 40V x 40MHz + 110V x 7mA +12 x 20mA - 602V/20k = 2.95W
IN
VDD
DP RP
R3
C3
Recommended values : R1 = 1k, R2 = 1.8k, RF = 20k, RP = 200, C4 > 10nF, C3 = 10 to 12pF for CF # 0.5pF. R3 # 150.
4/5
TDA9511
PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWATT
Dimensions A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia.
Min.
Millimeters Typ.
2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62
Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4
Min.
Inches Typ.
0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300
Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409
3 15.8 6.6
0.102 0.594 0.236 0.110 0.200
0.118 0.622 0.260
HEPTV.TBL
3.85
0.144
0.152
Information furni shed is believed to be accurate and reliable. However, SGS-THOMSON Micr oelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise und erany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This pu blication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I 2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
PM-HEPTV.EPS


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